STP24NM65N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

650V

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Series :

MDmesh™ II

Mounting Type :

Through Hole

Terminal Finish :

Tin (Sn)

Base Part Number :

STP24N

Rds On (Max) @ Id, Vgs :

190m Ω @ 9.5A, 10V

Fall Time (Typ) :

20 ns

JESD-30 Code :

R-PSFM-T3

Reach Compliance Code :

not_compliant

Rise Time :

10ns

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 50V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

160W

Gate to Source Voltage (Vgs) :

25V

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Turn-Off Delay Time :

80 ns

Mount :

Through Hole

Packaging :

Tube

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

76A

Drain-source On Resistance-Max :

0.19Ohm

Number of Terminations :

3

Package / Case :

TO-220-3

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

500 mJ

Vgs (Max) :

±25V

Power Dissipation-Max :

160W Tc

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Continuous Drain Current (ID) :

19A