STP24N65M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

64A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

150W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

16 Weeks

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Drain-source On Resistance-Max :

0.23Ohm

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

650V

Continuous Drain Current (ID) :

16A

Avalanche Energy Rating (Eas) :

650 mJ

Base Part Number :

STP24N

Number of Terminations :

3

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSFM-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Packaging :

Tube

Transistor Element Material :

SILICON

Series :

MDmesh™ M2

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±25V

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1060pF @ 100V

Rds On (Max) @ Id, Vgs :

230m Ω @ 8A, 10V

Package / Case :

TO-220-3

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

650V