STP24N60DM2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

200m Ω @ 9A, 10V

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

25V

Number of Elements :

1

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1055pF @ 100V

Element Configuration :

Single

Series :

FDmesh™ II Plus

Continuous Drain Current (ID) :

18A

Transistor Application :

SWITCHING

Turn On Delay Time :

15 ns

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.2Ohm

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

72A

Weight :

329.988449mg

Mount :

Through Hole

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain to Source Breakdown Voltage :

600V

Vgs (Max) :

±25V

Factory Lead Time :

17 Weeks

Number of Pins :

3

FET Type :

N-Channel

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Channels :

1

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Power Dissipation :

150W

Turn-Off Delay Time :

60 ns

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Rise Time :

8.7ns

Fall Time (Typ) :

15 ns

Base Part Number :

STP24N

Power Dissipation-Max :

150W Tc

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN