STP23NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

4.6mm

Base Part Number :

STP23N

Pin Count :

3

Mount :

Through Hole

Operating Temperature :

150°C TJ

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Series :

FDmesh™ II

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

78A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Rise Time :

45ns

REACH SVHC :

No SVHC

Turn On Delay Time :

21 ns

Radiation Hardening :

No

Length :

10.4mm

Gate to Source Voltage (Vgs) :

25V

Element Configuration :

Single

Package / Case :

TO-220-3

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

19.5A Tc

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Contact Plating :

Tin

Packaging :

Tube

Avalanche Energy Rating (Eas) :

700 mJ

Drain to Source Breakdown Voltage :

600V

Number of Terminations :

3

Fall Time (Typ) :

40 ns

Transistor Application :

SWITCHING

FET Type :

N-Channel

Power Dissipation-Max :

150W Tc

Resistance :

180mOhm

Rds On (Max) @ Id, Vgs :

180m Ω @ 10A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2100pF @ 50V

Operating Mode :

ENHANCEMENT MODE

Height :

15.75mm

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

19.5A

Turn-Off Delay Time :

90 ns

ECCN Code :

EAR99

Vgs (Max) :

±25V

JESD-609 Code :

e3

Power Dissipation :

150W

Threshold Voltage :

4V