STP21NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

17A

Turn On Delay Time :

18 ns

Lead Free :

Lead Free

Length :

10.4mm

Drain to Source Breakdown Voltage :

600V

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Operating Temperature :

150°C TJ

Number of Pins :

3

Gate to Source Voltage (Vgs) :

25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

4.6mm

Turn-Off Delay Time :

70 ns

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Radiation Hardening :

No

Number of Elements :

1

Threshold Voltage :

4V

Package / Case :

TO-220-3

Vgs (Max) :

±25V

Resistance :

220mOhm

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 50V

Power Dissipation :

140W

Rds On (Max) @ Id, Vgs :

220m Ω @ 8.5A, 10V

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

STP21N

Element Configuration :

Single

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn) - annealed

Height :

15.75mm

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Mount :

Through Hole

Number of Terminations :

3

Power Dissipation-Max :

140W Tc

Rise Time :

16ns

Packaging :

Tube

Series :

FDmesh™ II

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Fall Time (Typ) :

48 ns

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

68A

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

JEDEC-95 Code :

TO-220AB