STP21NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Lead Free

Number of Terminations :

3

Transistor Application :

SWITCHING

Power Dissipation-Max :

140W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Operating Temperature :

150°C TJ

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Current Rating :

17A

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 50V

Voltage - Rated DC :

600V

Transistor Element Material :

SILICON

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Base Part Number :

STP21N

FET Type :

N-Channel

Vgs (Max) :

±25V

Series :

MDmesh™

Drain-source On Resistance-Max :

0.22Ohm

Gate to Source Voltage (Vgs) :

25V

Turn-Off Delay Time :

84 ns

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Power Dissipation :

140W

Package / Case :

TO-220-3

Drain to Source Breakdown Voltage :

600V

Continuous Drain Current (ID) :

17A

Pin Count :

3

Rds On (Max) @ Id, Vgs :

220m Ω @ 8.5A, 10V

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

68A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

31 ns

JESD-30 Code :

R-PSFM-T3

Rise Time :

15ns

Element Configuration :

Single