STP21N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Height :

15.75mm

Radiation Hardening :

No

Power Dissipation :

125W

Drain to Source Breakdown Voltage :

650V

Avalanche Energy Rating (Eas) :

400 mJ

Width :

4.6mm

FET Type :

N-Channel

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

190m Ω @ 8.5A, 10V

Mount :

Through Hole

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Element Configuration :

Single

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

17A

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation-Max :

125W Tc

JEDEC-95 Code :

TO-220AB

Series :

MDmesh™ V

Base Part Number :

STP21N

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Pin Count :

3

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Pulsed Drain Current-Max (IDM) :

68A

Number of Pins :

3

Vgs (Max) :

±25V

Mounting Type :

Through Hole

Threshold Voltage :

4V

Gate to Source Voltage (Vgs) :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1950pF @ 100V

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Number of Elements :

1

Factory Lead Time :

17 Weeks

Operating Temperature :

150°C TJ

Terminal Finish :

Matte Tin (Sn)

Length :

10.4mm

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V