STP210N75F6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Pin Count :

3

Mounting Type :

Through Hole

ECCN Code :

EAR99

Height :

15.75mm

Gate to Source Voltage (Vgs) :

20V

Width :

4.6mm

Vgs (Max) :

±20V

Number of Terminations :

3

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Rise Time :

70ns

Gate Charge (Qg) (Max) @ Vgs :

171nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Power Dissipation :

300W

Resistance :

3.7mOhm

Turn On Delay Time :

34 ns

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 60A, 10V

Series :

DeepGATE™, STripFET™ VI

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

11800pF @ 25V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

2V

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Length :

10.4mm

Power Dissipation-Max :

300W Tc

JEDEC-95 Code :

TO-220AB

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

480A

Turn-Off Delay Time :

154 ns

Fall Time (Typ) :

71 ns

Package / Case :

TO-220-3

Drain to Source Breakdown Voltage :

75V

Continuous Drain Current (ID) :

120A

Element Configuration :

Single

REACH SVHC :

No SVHC

Base Part Number :

STP210