STP20NM65N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1280pF @ 50V

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

25V

Transistor Element Material :

SILICON

Resistance :

270mOhm

Operating Temperature :

150°C TJ

Packaging :

Tube

Base Part Number :

STP20N

Continuous Drain Current (ID) :

15A

Package / Case :

TO-220-3

Fall Time (Typ) :

20 ns

Rise Time :

10ns

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Pbfree Code :

yes

Height :

15.75mm

Turn-Off Delay Time :

75 ns

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

270m Ω @ 7.5A, 10V

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Vgs (Max) :

±25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Turn On Delay Time :

15 ns

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

650V

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Length :

10.4mm

Number of Elements :

1

Transistor Application :

SWITCHING

Power Dissipation :

160W

Number of Pins :

3

JESD-609 Code :

e3

Number of Terminations :

3

Power Dissipation-Max :

125W Tc

Width :

4.6mm

JEDEC-95 Code :

TO-220AB

Series :

MDmesh™ II

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

60A

Terminal Finish :

Matte Tin (Sn)