STP20NM60FD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

600V

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Rise Time :

12ns

Radiation Hardening :

No

Operating Temperature :

-65°C~150°C TJ

Current Rating :

20A

Mounting Type :

Through Hole

Base Part Number :

STP20N

Power Dissipation-Max :

192W Tc

Height :

9.15mm

Continuous Drain Current (ID) :

20A

Number of Terminations :

3

Mount :

Through Hole

Width :

4.6mm

Avalanche Energy Rating (Eas) :

700 mJ

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Power Dissipation :

192W

Factory Lead Time :

16 Weeks

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

80A

Packaging :

Tube

Threshold Voltage :

4V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Length :

10.4mm

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

3

Number of Elements :

1

Fall Time (Typ) :

22 ns

Rds On (Max) @ Id, Vgs :

290m Ω @ 10A, 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

Turn On Delay Time :

25 ns

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Series :

FDmesh™

Gate to Source Voltage (Vgs) :

30V

Drain-source On Resistance-Max :

0.29Ohm

Pin Count :

3

Voltage - Rated DC :

600V