STP20NM60A

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

80A

Power Dissipation :

192W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Part Number :

STP20N

Turn-Off Delay Time :

46 ns

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Mounting Type :

Through Hole

Packaging :

Tube

Vgs (Max) :

±30V

Voltage - Rated DC :

600V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

16ns

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

MDmesh™

Rds On (Max) @ Id, Vgs :

290m Ω @ 10A, 10V

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Fall Time (Typ) :

20 ns

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Current Rating :

20A

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

650V

Terminal Finish :

Matte Tin (Sn)

Continuous Drain Current (ID) :

20A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

600V

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

1630pF @ 25V

FET Type :

N-Channel

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Drain-source On Resistance-Max :

0.29Ohm

Power Dissipation-Max :

192W Tc

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Qualification Status :

Not Qualified

Pin Count :

3