STP20NM60

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Element Configuration :

Single

Voltage - Rated DC :

650V

Mounting Type :

Through Hole

Vgs (Max) :

±30V

Fall Time (Typ) :

11 ns

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Threshold Voltage :

4V

Series :

MDmesh™

ECCN Code :

EAR99

Number of Elements :

1

Current Rating :

20A

Radiation Hardening :

No

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Resistance :

290mOhm

Nominal Vgs :

4 V

Turn On Delay Time :

25 ns

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Avalanche Energy Rating (Eas) :

650 mJ

Turn-Off Delay Time :

42 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Rds On (Max) @ Id, Vgs :

290m Ω @ 10A, 10V

Factory Lead Time :

16 Weeks

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-220-3

Lead Free :

Lead Free

Power Dissipation :

192W

Rise Time :

20ns

Packaging :

Tube

Base Part Number :

STP20N

Drain to Source Breakdown Voltage :

600V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

Number of Terminations :

3

Power Dissipation-Max :

192W Tc

Pulsed Drain Current-Max (IDM) :

80A

Transistor Element Material :

SILICON

Number of Pins :

3

Continuous Drain Current (ID) :

20A

Operating Temperature :

150°C TJ

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)