SIHU7N60E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

78W

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

DS Breakdown Voltage-Min :

609V

Radiation Hardening :

No

Weight :

329.988449mg

Number of Channels :

1

Vgs (Max) :

±30V

Drain Current-Max (Abs) (ID) :

7A

Threshold Voltage :

2V

Drain to Source Voltage (Vdss) :

600V

FET Type :

N-Channel

Turn On Delay Time :

13 ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

78W Tc

Drain-source On Resistance-Max :

0.6Ohm

Turn-Off Delay Time :

24 ns

Fall Time (Typ) :

14 ns

Mounting Type :

Through Hole

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Factory Lead Time :

18 Weeks

Transistor Application :

SWITCHING

Number of Terminations :

3

Case Connection :

DRAIN

Continuous Drain Current (ID) :

7A

Rise Time :

13ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

Unknown

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 100V

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Published :

2014

Packaging :

Tube

Mount :

Through Hole

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

600m Ω @ 3.5A, 10V