SIHU3N50D-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Power Dissipation :

104W

Weight :

329.988449mg

Fall Time (Typ) :

13 ns

Threshold Voltage :

3V

Number of Terminations :

3

Length :

6.73mm

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Published :

2008

Number of Pins :

3

Turn On Delay Time :

12 ns

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Radiation Hardening :

No

Rise Time :

9ns

Pulsed Drain Current-Max (IDM) :

5.5A

DS Breakdown Voltage-Min :

500V

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Height :

6.22mm

Packaging :

Tube

Element Configuration :

Single

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

3A Tc

REACH SVHC :

Unknown

Drain Current-Max (Abs) (ID) :

3A

Continuous Drain Current (ID) :

3A

Input Capacitance (Ciss) (Max) @ Vds :

175pF @ 100V

Rds On (Max) @ Id, Vgs :

3.2 Ω @ 2.5A, 10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

69W Tc

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

8 Weeks

Gate to Source Voltage (Vgs) :

30V

Width :

2.39mm

Turn-Off Delay Time :

11 ns

Drain to Source Voltage (Vdss) :

500V

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA