SIHU4N80AE-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

622pF @ 100V

Rds On (Max) @ Id, Vgs :

1.27Ohm @ 2A, 10V

Series :

E

Supplier Device Package :

IPAK (TO-251)

Drain to Source Voltage (Vdss) :

800V

Package / Case :

TO-251-3 Long Leads, IPak, TO-251AB

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

69W Tc

Factory Lead Time :

14 Weeks

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

4.3A Tc

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Vgs (Max) :

±30V