SIHU3N50DA-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

8 Weeks

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Rds On (Max) @ Id, Vgs :

3.2 Ω @ 1.5A, 10V

Power Dissipation-Max :

69W Tc

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-251-3 Long Leads, IPak, TO-251AB

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

500V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4.5V @ 250μA

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Input Capacitance (Ciss) (Max) @ Vds :

177pF @ 100V

Vgs (Max) :

±30V