SIHU6N62E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Rise Time :

10ns

Power Dissipation-Max :

78W Tc

Rds On (Max) @ Id, Vgs :

900m Ω @ 3A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

16 ns

Avalanche Energy Rating (Eas) :

88 mJ

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Transistor Application :

SWITCHING

Mount :

Through Hole

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

578pF @ 100V

Drain Current-Max (Abs) (ID) :

6A

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Turn-Off Delay Time :

22 ns

Drain to Source Voltage (Vdss) :

620V

Weight :

329.988449mg

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

Unknown

Number of Channels :

1

Factory Lead Time :

18 Weeks

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.9Ohm

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

12 ns

Number of Elements :

1

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

6A

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Published :

2016

Packaging :

Cut Tape (CT)

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN