SIHU3N50D-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

175pF @ 100V

FET Type :

N-Channel

Factory Lead Time :

13 Weeks

Vgs (Max) :

±30V

Number of Elements :

1

Continuous Drain Current (ID) :

3A

Rise Time :

9ns

Number of Channels :

1

Turn On Delay Time :

12 ns

Mount :

Through Hole

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Published :

2013

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

3A

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Weight :

329.988449mg

Fall Time (Typ) :

13 ns

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

500V

Transistor Application :

SWITCHING

Number of Pins :

3

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

3.2 Ω @ 2.5A, 10V

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

5.5A

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Radiation Hardening :

No

Number of Terminations :

3

DS Breakdown Voltage-Min :

500V

Power Dissipation-Max :

69W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

11 ns

Gate to Source Voltage (Vgs) :

5V

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tube