SIHU6N65E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

78W

Case Connection :

DRAIN

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Drain Current-Max (Abs) (ID) :

7A

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-251-3 Long Leads, IPak, TO-251AB

Fall Time (Typ) :

20 ns

Input Capacitance (Ciss) (Max) @ Vds :

820pF @ 100V

Rise Time :

12ns

FET Type :

N-Channel

Continuous Drain Current (ID) :

7A

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSIP-T3

Power Dissipation-Max :

78W Tc

Drain to Source Breakdown Voltage :

650V

Lead Free :

Lead Free

Number of Elements :

1

Gate to Source Voltage (Vgs) :

4V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

Drain-source On Resistance-Max :

0.6Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

18 Weeks

Avalanche Energy Rating (Eas) :

56 mJ

Number of Terminations :

3

Turn-Off Delay Time :

30 ns

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Published :

2016

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

600m Ω @ 3A, 10V