SIHU4N80E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Junction Temperature (Tj) :

150°C

Mounting Type :

Through Hole

Packaging :

Tube

Max Operating Temperature :

150°C

Supplier Device Package :

IPAK (TO-251)

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Drain to Source Voltage (Vdss) :

800V

Series :

E

Input Capacitance (Ciss) (Max) @ Vds :

622pF @ 100V

Rds On (Max) @ Id, Vgs :

1.27Ohm @ 2A, 10V

Number of Channels :

1

Turn-Off Delay Time :

26 ns

Vgs (Max) :

±30V

Turn On Delay Time :

12 ns

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-251-3 Long Leads, IPak, TO-251AB

Drain to Source Resistance :

1.1Ohm

Power Dissipation :

69W

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

4.3A Tc

Continuous Drain Current (ID) :

4.3A

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55°C

Power Dissipation-Max :

69W Tc

Factory Lead Time :

18 Weeks

Height :

8.5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

800V

Gate to Source Voltage (Vgs) :

30V