SIHU6N80AE-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

422pF @ 100V

Series :

E

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

22.5nC @ 10V

Power Dissipation-Max :

62.5W Tc

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Rds On (Max) @ Id, Vgs :

950mOhm @ 2A, 10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

TO-251AA

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

800V

RoHS Status :

ROHS3 Compliant