SIHU2N80AE-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

-

Operating Temperature :

-55°C ~ 150°C (TJ)

Package :

Tube

Channel Mode :

Enhancement

Power Dissipation (Max) :

62.5W (Tc)

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

800 V

Transistor Type :

1 N-Channel

Channel Type :

N

Input Capacitance (Ciss) (Max) @ Vds :

180 pF @ 100 V

Power Dissipation :

62.5W

Package Type :

IPAK (TO-251)

Mounting Style :

Through Hole

Number of Elements per Chip :

1

Minimum Operating Temperature :

- 55 C

Number of Channels :

1 Channel

Configuration :

Single

Transistor Polarity :

N-Channel

Maximum Operating Temperature :

+ 155 C

Base Product Number :

SIHU2

MSL :

MSL 1 - Unlimited

Brand :

Vishay / Siliconix

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

2.9Ohm @ 500mA, 10V

Series :

E

Product Status :

Active

Manufacturer :

Vishay

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

2.9A (Tc)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Gate Charge (Qg) (Max) @ Vgs :

10.5 nC @ 10 V

Qualification :

-

Mounting Type :

Through Hole

RoHS :

Details

Rise Time :

8 ns

Subcategory :

MOSFETs

Drive Voltage (Max Rds On, Min Rds On) :

10V

Supplier Device Package :

TO-251AA

Pin Count :

3

Continuous Drain Current Id :

2.9A

Product Type :

MOSFET

Product Category :

MOSFET