SIHU7N60E-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

600mOhm @ 3.5A, 10V

Rise Time :

13ns

Supplier Device Package :

TO-251

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1

Rds On Max :

600 mΩ

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

24 ns

Vgs (Max) :

±30V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 100V

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

600V

Input Capacitance :

680pF

Drain to Source Resistance :

600mOhm

Turn On Delay Time :

13 ns

Power Dissipation-Max :

78W Tc

Number of Pins :

3

Published :

2016

Vgs(th) (Max) @ Id :

4V @ 250µA

Radiation Hardening :

No

Element Configuration :

Single

Drain to Source Breakdown Voltage :

600V

RoHS Status :

ROHS3 Compliant

Weight :

329.988449mg

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

7A

FET Type :

N-Channel

Fall Time (Typ) :

14 ns

Operating Temperature :

-55°C~150°C TJ

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Gate to Source Voltage (Vgs) :

20V