SIHU6N80E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Factory Lead Time :

18 Weeks

Drain to Source Voltage (Vdss) :

800V

Packaging :

Tube

Package / Case :

TO-251-3 Long Leads, IPak, TO-251AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

827pF @ 100V

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Supplier Device Package :

IPAK (TO-251)

Power Dissipation-Max :

78W Tc

Current - Continuous Drain (Id) @ 25°C :

5.4A Tc

Series :

E

Rds On (Max) @ Id, Vgs :

940mOhm @ 3A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)