SIHU5N50D-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

500V

Avalanche Energy Rating (Eas) :

28.8 mJ

Vgs (Max) :

±30V

Height :

6.22mm

Number of Elements :

1

REACH SVHC :

Unknown

Weight :

329.988449mg

Turn-Off Delay Time :

14 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

5.3A Tc

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Threshold Voltage :

3V

Published :

2008

Power Dissipation-Max :

104W Tc

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 2.5A, 10V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

325pF @ 100V

Element Configuration :

Single

Length :

6.73mm

Rise Time :

11ns

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Width :

2.39mm

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Transistor Element Material :

SILICON

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

12 ns

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

Number of Channels :

1

Number of Terminations :

3

Continuous Drain Current (ID) :

5.3A

Fall Time (Typ) :

11 ns