SI7898DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

5

Resistance :

85mOhm

Fall Time (Typ) :

10 ns

Series :

TrenchFET®

Turn-Off Delay Time :

24 ns

Continuous Drain Current (ID) :

3A

Pbfree Code :

yes

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Radiation Hardening :

No

Pin Count :

8

Case Connection :

DRAIN

Factory Lead Time :

14 Weeks

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

1.9W

Transistor Application :

SWITCHING

Width :

5.89mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

4V

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Weight :

506.605978mg

Height :

1.04mm

Number of Pins :

8

Power Dissipation-Max :

1.9W Ta

Terminal Form :

C BEND

Nominal Vgs :

4 V

Published :

2015

Length :

4.9mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

25A

Vgs (Max) :

±20V

Lead Free :

Lead Free

Contact Plating :

Tin

Turn On Delay Time :

9 ns

JESD-609 Code :

e3

JESD-30 Code :

R-XDSO-C5

Number of Elements :

1

Terminal Position :

Dual

Element Configuration :

Single

FET Type :

N-Channel

Number of Channels :

1

Drain Current-Max (Abs) (ID) :

3A

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Package / Case :

PowerPAK® SO-8

Rds On (Max) @ Id, Vgs :

85m Ω @ 3.5A, 10V

Packaging :

Tape and Reel (TR)

Rise Time :

10ns

Drain to Source Breakdown Voltage :

150V

Dual Supply Voltage :

150V

Transistor Element Material :

SILICON

Termination :

SMD/SMT