SI7898DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Number of Pins :

8

Terminal Position :

Dual

Series :

TrenchFET®

Number of Terminations :

5

Contact Plating :

Tin

Turn On Delay Time :

9 ns

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

3A

ECCN Code :

EAR99

Max Junction Temperature (Tj) :

150°C

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

3A

Width :

5.89mm

Time@Peak Reflow Temperature-Max (s) :

40

Drain to Source Voltage (Vdss) :

150V

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2016

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

Resistance :

85mOhm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Turn-Off Delay Time :

24 ns

Nominal Vgs :

4 V

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Length :

4.9mm

Fall Time (Typ) :

10 ns

FET Type :

N-Channel

Number of Channels :

1

Weight :

506.605978mg

RoHS Status :

ROHS3 Compliant

Rise Time :

10ns

Factory Lead Time :

14 Weeks

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

JESD-30 Code :

R-XDSO-C5

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

85m Ω @ 3.5A, 10V

Mount :

Surface Mount

Threshold Voltage :

2V

Terminal Form :

C BEND

Power Dissipation-Max :

1.9W Ta

Height :

1.12mm

Element Configuration :

Single

Package / Case :

PowerPAK® SO-8

Number of Elements :

1

Power Dissipation :

1.9W

REACH SVHC :

Unknown

Pulsed Drain Current-Max (IDM) :

25A

Pbfree Code :

yes