SI7892BDP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

506.605978mg

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 4.5V

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Height :

1.04mm

Number of Elements :

1

Turn-Off Delay Time :

62 ns

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Reach Compliance Code :

Unknown

Drain to Source Breakdown Voltage :

30V

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 25A, 10V

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

25A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Power Dissipation :

1.8W

Number of Pins :

8

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

30

Pbfree Code :

yes

Element Configuration :

Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Qualification Status :

Not Qualified

Published :

2009

Power Dissipation-Max :

1.8W Ta

Series :

TrenchFET®

Input Capacitance (Ciss) (Max) @ Vds :

3775pF @ 15V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

PowerPAK® SO-8

Length :

4.9mm

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Factory Lead Time :

14 Weeks

Turn On Delay Time :

20 ns

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

13 ns

JESD-30 Code :

R-XDSO-C5

ECCN Code :

EAR99

Number of Terminations :

5

Terminal Form :

C BEND

FET Type :

N-Channel

Width :

5.89mm

Number of Channels :

1

Pin Count :

8

Rise Time :

13ns

Pulsed Drain Current-Max (IDM) :

60A

Drain-source On Resistance-Max :

0.0042Ohm