SI7892BDP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

PowerPAK® SO-8

Threshold Voltage :

1V

Number of Terminations :

5

Pulsed Drain Current-Max (IDM) :

60A

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Input Capacitance (Ciss) (Max) @ Vds :

3775pF @ 15V

Operating Temperature :

-55°C~150°C TJ

Published :

2009

Power Dissipation :

1.8W

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Radiation Hardening :

No

Resistance :

4.2mOhm

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

30V

Terminal Form :

C BEND

Continuous Drain Current (ID) :

25A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Number of Elements :

1

Turn-Off Delay Time :

62 ns

Height :

1.04mm

Vgs(th) (Max) @ Id :

3V @ 250µA

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Weight :

506.605978mg

Width :

5.89mm

Turn On Delay Time :

20 ns

Nominal Vgs :

1 V

Terminal Position :

Dual

Power Dissipation-Max :

1.8W Ta

Series :

TrenchFET®

Fall Time (Typ) :

35 ns

Contact Plating :

Tin

FET Type :

N-Channel

Number of Channels :

1

Drain to Source Voltage (Vdss) :

30V

Length :

4.9mm

REACH SVHC :

Unknown

Mount :

Surface Mount

Element Configuration :

Single

Transistor Element Material :

SILICON

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Rise Time :

20ns

JESD-30 Code :

R-XDSO-C5

Vgs (Max) :

±20V

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 25A, 10V

Pbfree Code :

yes

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

14 Weeks