SI7888DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

9.4A Ta

Packaging :

Tape and Reel (TR)

Rise Time :

11ns

Pbfree Code :

yes

Vgs (Max) :

±12V

Element Configuration :

Single

Number of Terminations :

5

Number of Elements :

1

Case Connection :

DRAIN

JESD-609 Code :

e3

Published :

2013

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

TrenchFET®

Package / Case :

PowerPAK® SO-8

Transistor Element Material :

SILICON

Mount :

Surface Mount

Fall Time (Typ) :

11 ns

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 5V

Pin Count :

8

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

12m Ω @ 12.4A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

9.4A

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.012Ohm

Turn On Delay Time :

10 ns

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

R-XDSO-C5

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

50A

Power Dissipation-Max :

1.8W Ta

Drain to Source Breakdown Voltage :

30V

Vgs(th) (Max) @ Id :

2V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

20 mJ

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Turn-Off Delay Time :

24 ns

FET Type :

N-Channel

ECCN Code :

EAR99

Terminal Form :

C BEND