SI7888DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

11ns

Current - Continuous Drain (Id) @ 25°C :

9.4A Ta

ECCN Code :

EAR99

Terminal Form :

C BEND

Element Configuration :

Single

DS Breakdown Voltage-Min :

30V

Package / Case :

PowerPAK® SO-8

Rds On (Max) @ Id, Vgs :

12m Ω @ 12.4A, 10V

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 5V

Number of Pins :

8

Transistor Element Material :

SILICON

Turn-Off Delay Time :

24 ns

JESD-609 Code :

e3

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

50A

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

5

Height :

1.0668mm

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-XDSO-C5

Drain to Source Voltage (Vdss) :

30V

Pin Count :

8

Fall Time (Typ) :

11 ns

Time@Peak Reflow Temperature-Max (s) :

20

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

9.4A

Power Dissipation :

1.8W

Radiation Hardening :

No

Number of Elements :

1

FET Type :

N-Channel

Turn On Delay Time :

10 ns

Power Dissipation-Max :

1.8W Ta

Series :

TrenchFET®

Length :

5.969mm

Vgs (Max) :

±12V

Avalanche Energy Rating (Eas) :

20 mJ

Published :

2009

Width :

5.0038mm

Vgs(th) (Max) @ Id :

2V @ 250μA

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes