SI7886ADP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

4.9mm

Rds On (Max) @ Id, Vgs :

4mOhm @ 25A, 10V

Vgs (Max) :

±12V

Turn On Delay Time :

17 ns

Drain to Source Breakdown Voltage :

30V

Package / Case :

PowerPAK® SO-8

Series :

TrenchFET®

Min Operating Temperature :

-55°C

Weight :

506.605978mg

Input Capacitance :

6.45nF

Turn-Off Delay Time :

158 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Width :

5.89mm

Fall Time (Typ) :

43 ns

Resistance :

4mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

PowerPAK® SO-8

Power Dissipation-Max :

1.9W Ta

Drain to Source Voltage (Vdss) :

30V

Height :

1.04mm

Number of Channels :

1

Rise Time :

14ns

Rds On Max :

4 mΩ

Input Capacitance (Ciss) (Max) @ Vds :

6450pF @ 15V

Continuous Drain Current (ID) :

15A

Published :

2016

Drain to Source Resistance :

4mOhm

Gate to Source Voltage (Vgs) :

12V

Mount :

Surface Mount

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 4.5V

Packaging :

Tape and Reel (TR)

Element Configuration :

Single