SI7884BDP-T1-E3

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Mfr.Part #
SI7884BDP-T1-E3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET N-CH 40V 58A PPAK SO-8
Stock
8,017
In Stock :
8,017

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
4.6W Ta 46W Tc
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
TrenchFET®
Terminal Position :
Dual
Length :
4.9mm
Number of Elements :
1
Turn On Delay Time :
30 ns
Transistor Element Material :
SILICON
Packaging :
Tape and Reel (TR)
ECCN Code :
EAR99
Mount :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
3540pF @ 20V
Resistance :
7.5mOhm
Pin Count :
8
Peak Reflow Temperature (Cel) :
260
Drain to Source Breakdown Voltage :
40V
Gate Charge (Qg) (Max) @ Vgs :
77nC @ 10V
Radiation Hardening :
No
Fall Time (Typ) :
11 ns
Mounting Type :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
FET Type :
N-Channel
Transistor Application :
SWITCHING
Lead Free :
Lead Free
Pbfree Code :
yes
Number of Pins :
8
Factory Lead Time :
14 Weeks
Pulsed Drain Current-Max (IDM) :
50A
Published :
2015
JESD-609 Code :
e3
Vgs(th) (Max) @ Id :
3V @ 250µA
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
58A Tc
Number of Terminations :
5
Time@Peak Reflow Temperature-Max (s) :
30
Avalanche Energy Rating (Eas) :
54 mJ
Terminal Form :
C BEND
Width :
5.89mm
Weight :
506.605978mg
JESD-30 Code :
R-XDSO-C5
Rise Time :
14ns
Height :
1.04mm
Power Dissipation :
4.6W
Gate to Source Voltage (Vgs) :
20V
REACH SVHC :
Unknown
Nominal Vgs :
1 V
Rds On (Max) @ Id, Vgs :
7.5m Ω @ 16A, 10V
Package / Case :
PowerPAK® SO-8
Operating Temperature :
-55°C~150°C TJ
Case Connection :
DRAIN
Turn-Off Delay Time :
38 ns
Continuous Drain Current (ID) :
18.5A
Terminal Finish :
Matte Tin (Sn)
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Number of Channels :
1
Datasheets
SI7884BDP-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI7884BDP-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:8, Number of Terminations:5, Package / Case:PowerPAK® SO-8, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, SI7884BDP-T1-E3 pinout, SI7884BDP-T1-E3 datasheet PDF, SI7884BDP-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI7884BDP-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI7884BDP-T1-E3


N-Channel Tape & Reel (TR) 7.5m Ω @ 16A, 10V ±20V 3540pF @ 20V 77nC @ 10V PowerPAK® SO-8

SI7884BDP-T1-E3 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 54 mJ.A device's maximum input capacitance is 3540pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 18.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 38 ns.Its maximum pulsed drain current is 50A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 30 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

SI7884BDP-T1-E3 Features


the avalanche energy rating (Eas) is 54 mJ
a continuous drain current (ID) of 18.5A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 50A.


SI7884BDP-T1-E3 Applications


There are a lot of Vishay Siliconix
SI7884BDP-T1-E3 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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