SI7882DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Package / Case :

PowerPAK® SO-8

Case Connection :

DRAIN

Turn On Delay Time :

28 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

JESD-30 Code :

R-PDSO-C5

Turn-Off Delay Time :

82 ns

Gate to Source Voltage (Vgs) :

8V

Pulsed Drain Current-Max (IDM) :

50A

Power Dissipation-Max :

1.9W Ta

Length :

4.9mm

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 17A, 4.5V

Vgs (Max) :

±8V

JESD-609 Code :

e3

Terminal Form :

C BEND

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Drain to Source Breakdown Voltage :

12V

Series :

TrenchFET®

Number of Pins :

8

Width :

5.89mm

Avalanche Energy Rating (Eas) :

7.2 mJ

Peak Reflow Temperature (Cel) :

260

Number of Channels :

1

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

13A Ta

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Number of Terminations :

5

Fall Time (Typ) :

32 ns

Height :

1.04mm

Weight :

506.605978mg

Pin Count :

8

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Rise Time :

32ns

Continuous Drain Current (ID) :

22A

Operating Temperature :

-55°C~150°C TJ

Published :

2013

Threshold Voltage :

1.4V

Mounting Type :

Surface Mount

Radiation Hardening :

No

REACH SVHC :

Unknown

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0055Ohm

FET Type :

N-Channel

Pbfree Code :

yes