SI7882DP-T1-E3
- Mfr.Part #
- SI7882DP-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 12V 13A PPAK SO-8
- Stock
- 23,667
- In Stock :
- 23,667
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Threshold Voltage :
- 1.4V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 5W
- Continuous Drain Current (ID) :
- 13A
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 50A
- Length :
- 4.9mm
- Number of Terminations :
- 5
- Turn On Delay Time :
- 28 ns
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Width :
- 5.89mm
- Height :
- 1.04mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta
- Package / Case :
- PowerPAK® SO-8
- Rds On (Max) @ Id, Vgs :
- 5.5m Ω @ 17A, 4.5V
- Turn-Off Delay Time :
- 82 ns
- Number of Pins :
- 8
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Power Dissipation-Max :
- 1.9W Ta
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Matte Tin (Sn)
- Resistance :
- 5.5mOhm
- Vgs (Max) :
- ±8V
- Termination :
- SMD/SMT
- Terminal Position :
- Dual
- Additional Feature :
- FAST SWITCHING
- Rise Time :
- 32ns
- Peak Reflow Temperature (Cel) :
- 260
- Fall Time (Typ) :
- 32 ns
- RoHS Status :
- ROHS3 Compliant
- Series :
- TrenchFET®
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Published :
- 2009
- Dual Supply Voltage :
- 12V
- Element Configuration :
- Single
- Pin Count :
- 8
- Terminal Form :
- C BEND
- Case Connection :
- DRAIN
- Weight :
- 506.605978mg
- Nominal Vgs :
- 1.4 V
- Gate to Source Voltage (Vgs) :
- 8V
- Avalanche Energy Rating (Eas) :
- 7.2 mJ
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 4.5V
- Radiation Hardening :
- No
- Number of Channels :
- 1
- Vgs(th) (Max) @ Id :
- 1.4V @ 250μA
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PDSO-C5
- Transistor Application :
- SWITCHING
- Datasheets
- SI7882DP-T1-E3
N-Channel Tape & Reel (TR) 5.5m Ω @ 17A, 4.5V ±8V 30nC @ 4.5V PowerPAK® SO-8
SI7882DP-T1-E3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 7.2 mJ.Its continuous drain current is 13A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 82 ns.Its maximum pulsed drain current is 50A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 28 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1.4V.This device uses no drive voltage (2.5V 4.5V) to reduce its overall power consumption.
SI7882DP-T1-E3 Features
the avalanche energy rating (Eas) is 7.2 mJ
a continuous drain current (ID) of 13A
the turn-off delay time is 82 ns
based on its rated peak drain current 50A.
a threshold voltage of 1.4V
SI7882DP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7882DP-T1-E3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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