SI7880ADP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 10V

Continuous Drain Current (ID) :

40A

Rds On (Max) @ Id, Vgs :

3m Ω @ 20A, 10V

Radiation Hardening :

No

Element Configuration :

Single

Mount :

Surface Mount

Pin Count :

8

Turn On Delay Time :

20 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

8

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.004ohm

Published :

2008

Drain to Source Breakdown Voltage :

30V

Number of Terminations :

5

Fall Time (Typ) :

30 ns

Series :

TrenchFET®

Case Connection :

DRAIN

Package / Case :

PowerPAK® SO-8

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Transistor Element Material :

SILICON

Terminal Position :

Dual

Power Dissipation :

5.4W

Rise Time :

14ns

Weight :

506.605978mg

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 15V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

C BEND

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-XDSO-C5

Power Dissipation-Max :

5.4W Ta 83W Tc

Number of Elements :

1

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

3V @ 250µA

Factory Lead Time :

14 Weeks

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

70A

ECCN Code :

EAR99

Turn-Off Delay Time :

96 ns

Peak Reflow Temperature (Cel) :

260