SI7880ADP-T1-E3
- Mfr.Part #
- SI7880ADP-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 40A PPAK SO-8
- Stock
- 7,572
- In Stock :
- 7,572
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- C BEND
- Rds On (Max) @ Id, Vgs :
- 3m Ω @ 20A, 10V
- Mount :
- Surface Mount, Through Hole
- Number of Pins :
- 8
- Radiation Hardening :
- No
- Power Dissipation :
- 5.4W
- Turn-Off Delay Time :
- 96 ns
- Threshold Voltage :
- 1V
- Length :
- 4.9mm
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Number of Channels :
- 1
- JESD-30 Code :
- R-XDSO-C5
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 125nC @ 10V
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Nominal Vgs :
- 1 V
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 20 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 5600pF @ 15V
- Transistor Application :
- SWITCHING
- Pin Count :
- 8
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- TrenchFET®
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Rise Time :
- 14ns
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 5.4W Ta 83W Tc
- Terminal Finish :
- Matte Tin (Sn)
- Continuous Drain Current (ID) :
- 40A
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 70A
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 30 ns
- Packaging :
- Tape and Reel (TR)
- Weight :
- 506.605978mg
- Peak Reflow Temperature (Cel) :
- 260
- Drain to Source Breakdown Voltage :
- 30V
- Number of Terminations :
- 5
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- REACH SVHC :
- Unknown
- Resistance :
- 3mOhm
- Width :
- 5.89mm
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Package / Case :
- PowerPAK® SO-8
- Factory Lead Time :
- 14 Weeks
- Height :
- 1.04mm
- Published :
- 2009
- Datasheets
- SI7880ADP-T1-E3
N-Channel Tape & Reel (TR) 3m Ω @ 20A, 10V ±20V 5600pF @ 15V 125nC @ 10V PowerPAK® SO-8
SI7880ADP-T1-E3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5600pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 96 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 70A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 1V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SI7880ADP-T1-E3 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 96 ns
based on its rated peak drain current 70A.
a threshold voltage of 1V
SI7880ADP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7880ADP-T1-E3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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