SI7868ADP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

C BEND

Input Capacitance (Ciss) (Max) @ Vds :

6110pF @ 10V

Weight :

506.605978mg

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Package / Case :

PowerPAK® SO-8

Vgs (Max) :

±16V

Number of Elements :

1

Pin Count :

8

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

20V

Gate to Source Voltage (Vgs) :

16V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

2.25m Ω @ 20A, 10V

Continuous Drain Current (ID) :

40A

DS Breakdown Voltage-Min :

20V

ECCN Code :

EAR99

JESD-30 Code :

R-XDSO-C5

Mount :

Surface Mount

Radiation Hardening :

No

Published :

2008

Power Dissipation-Max :

5.4W Ta 83W Tc

FET Type :

N-Channel

Terminal Position :

Dual

Case Connection :

DRAIN

Factory Lead Time :

14 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

35A

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1.6V @ 250μA

Number of Channels :

1

Pbfree Code :

yes

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.00275Ohm

Pulsed Drain Current-Max (IDM) :

70A

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

45 mJ