SI7868ADP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-XDSO-C5

Series :

TrenchFET®

Lead Free :

Lead Free

Mount :

Surface Mount

JESD-609 Code :

e3

Nominal Vgs :

600 mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Terminal Form :

C BEND

Width :

5.89mm

Pbfree Code :

yes

Resistance :

2.25mOhm

Drain to Source Breakdown Voltage :

20V

Fall Time (Typ) :

12 ns

Power Dissipation-Max :

5.4W Ta 83W Tc

Operating Temperature :

-55°C~150°C TJ

Length :

4.9mm

Drain Current-Max (Abs) (ID) :

35A

Weight :

506.605978mg

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Turn-Off Delay Time :

58 ns

Avalanche Energy Rating (Eas) :

45 mJ

Pulsed Drain Current-Max (IDM) :

70A

Published :

2008

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

2.25m Ω @ 20A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

REACH SVHC :

Unknown

Factory Lead Time :

14 Weeks

Vgs(th) (Max) @ Id :

1.6V @ 250μA

Height :

1.04mm

Pin Count :

8

Rise Time :

120ns

Number of Terminations :

5

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Continuous Drain Current (ID) :

40A

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

16V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Package / Case :

PowerPAK® SO-8

Vgs (Max) :

±16V

Number of Pins :

8

Power Dissipation :

5.4W

Input Capacitance (Ciss) (Max) @ Vds :

6110pF @ 10V

Turn On Delay Time :

28 ns

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

40A Tc

FET Type :

N-Channel

Element Configuration :

Single