SI7866ADP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Length :

4.9mm

Terminal Form :

C BEND

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

5415pF @ 10V

Package / Case :

PowerPAK® SO-8

Fall Time (Typ) :

9 ns

Radiation Hardening :

No

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

JESD-30 Code :

R-XDSO-C5

Threshold Voltage :

800mV

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Height :

1.04mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

35A

Number of Pins :

8

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

Unknown

Pin Count :

8

Terminal Position :

Dual

Resistance :

2.4MOhm

Weight :

506.605978mg

Series :

TrenchFET®

Drain to Source Breakdown Voltage :

20V

Width :

5.89mm

Rise Time :

105ns

Lead Free :

Lead Free

Continuous Drain Current (ID) :

40A

Element Configuration :

Single

Turn-Off Delay Time :

49 ns

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 10V

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 20A, 10V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Power Dissipation :

5.4W

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Pulsed Drain Current-Max (IDM) :

70A

Number of Channels :

1

Number of Terminations :

5

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Published :

2015

Power Dissipation-Max :

5.4W Ta 83W Tc

JESD-609 Code :

e3

Turn On Delay Time :

18 ns

Packaging :

Tape and Reel (TR)