SI7862ADP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Terminal Position :

Dual

Package / Case :

PowerPAK® SO-8

Gate to Source Voltage (Vgs) :

8V

Fall Time (Typ) :

50 ns

Published :

2016

Transistor Element Material :

SILICON

JESD-30 Code :

R-XDSO-C5

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Channels :

1

Pulsed Drain Current-Max (IDM) :

60A

Peak Reflow Temperature (Cel) :

260

Weight :

506.605978mg

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

3m Ω @ 29A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

7340pF @ 8V

Turn-Off Delay Time :

120 ns

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

16V

Rise Time :

38ns

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

42 ns

Series :

TrenchFET®

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

18A Ta

Pin Count :

8

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Continuous Drain Current (ID) :

18A

Power Dissipation-Max :

1.9W Ta

Transistor Application :

SWITCHING

Factory Lead Time :

14 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

N-Channel

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 4.5V

JESD-609 Code :

e3

Number of Terminations :

5

Vgs (Max) :

±8V

Drain-source On Resistance-Max :

0.003Ohm

Terminal Form :

C BEND