SI7860DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Mount :

Surface Mount

Element Configuration :

Single

Rise Time :

12ns

Pin Count :

8

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2009

Rds On (Max) @ Id, Vgs :

8m Ω @ 18A, 10V

Power Dissipation :

1.8W

Package / Case :

PowerPAK® SO-8

Pbfree Code :

yes

Power Dissipation-Max :

1.8W Ta

Turn-Off Delay Time :

46 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

50A

Transistor Element Material :

SILICON

Series :

TrenchFET®

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Fall Time (Typ) :

19 ns

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Number of Terminations :

5

Avalanche Energy Rating (Eas) :

45 mJ

Current - Continuous Drain (Id) @ 25°C :

11A Ta

JESD-609 Code :

e3

Continuous Drain Current (ID) :

11A

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-XDSO-C5

Turn On Delay Time :

18 ns

ECCN Code :

EAR99

Radiation Hardening :

No

Terminal Form :

C BEND

Drain to Source Breakdown Voltage :

30V

FET Type :

N-Channel

Number of Pins :

8