SI7860DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

5.969mm

Avalanche Energy Rating (Eas) :

45 mJ

Termination :

SMD/SMT

Case Connection :

DRAIN

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Turn On Delay Time :

18 ns

FET Type :

N-Channel

Fall Time (Typ) :

12 ns

ECCN Code :

EAR99

Rise Time :

12ns

Transistor Element Material :

SILICON

Width :

5.0038mm

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

50A

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Nominal Vgs :

3 V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

18A

Terminal Position :

Dual

Radiation Hardening :

No

Input Capacitance :

3.45nF

Published :

2009

Dual Supply Voltage :

30V

Drain to Source Breakdown Voltage :

30V

Threshold Voltage :

3V

JESD-30 Code :

R-XDSO-C5

Height :

1.0668mm

Lead Free :

Lead Free

Power Dissipation-Max :

1.8W Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Mounting Type :

Surface Mount

Turn-Off Delay Time :

46 ns

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

8m Ω @ 18A, 10V

Series :

TrenchFET®

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

C BEND

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Package / Case :

PowerPAK® SO-8

Number of Terminations :

5

REACH SVHC :

No SVHC

Power Dissipation :

1.8W

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Resistance :

8mOhm