SI7860ADP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Package / Case :

PowerPAK® SO-8

FET Type :

N-Channel

Number of Terminations :

5

JESD-30 Code :

R-XDSO-C5

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

30V

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

50A

Resistance :

9.5MOhm

Number of Elements :

1

Rise Time :

12ns

Lead Free :

Lead Free

Mount :

Surface Mount

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Transistor Element Material :

SILICON

Terminal Position :

Dual

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Additional Feature :

FAST SWITCHING

Published :

2013

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Fall Time (Typ) :

12 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Power Dissipation :

1.8W

Turn On Delay Time :

18 ns

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Continuous Drain Current (ID) :

11A

Terminal Form :

C BEND

Pin Count :

8

Pbfree Code :

yes

Turn-Off Delay Time :

46 ns

Power Dissipation-Max :

1.8W Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

60 mJ

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 16A, 10V

Radiation Hardening :

No