SI7858BDP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Rise Time :

53ns

Published :

2016

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

20 mJ

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

RoHS Status :

ROHS3 Compliant

Weight :

506.605978mg

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

8V

Drain to Source Voltage (Vdss) :

12V

Power Dissipation-Max :

5W Ta 48W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 15A, 4.5V

Terminal Form :

C BEND

Turn-Off Delay Time :

115 ns

Transistor Application :

SWITCHING

Vgs (Max) :

±8V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Dual

Radiation Hardening :

No

Series :

TrenchFET®

Transistor Element Material :

SILICON

Number of Pins :

8

Mount :

Surface Mount

Number of Elements :

1

ECCN Code :

EAR99

JESD-30 Code :

R-XDSO-C5

Package / Case :

PowerPAK® SO-8

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Fall Time (Typ) :

30 ns

Power Dissipation :

5W

Mounting Type :

Surface Mount

Turn On Delay Time :

25 ns

Number of Channels :

1

Pin Count :

8

Continuous Drain Current (ID) :

40A

Resistance :

2.5MOhm

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

5760pF @ 6V

Vgs(th) (Max) @ Id :

1V @ 250μA

Factory Lead Time :

14 Weeks

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 4.5V

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Number of Terminations :

5

Pulsed Drain Current-Max (IDM) :

70A

Drain Current-Max (Abs) (ID) :

33A

FET Type :

N-Channel

Pbfree Code :

yes