SI7858ADP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

506.605978mg

Turn On Delay Time :

40 ns

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.0026Ohm

Vgs (Max) :

±8V

Number of Elements :

1

Pbfree Code :

yes

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Power Dissipation :

1.9W

Length :

4.9mm

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 4.5V

JESD-30 Code :

R-PDSO-C5

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Terminal Position :

Dual

Power Dissipation-Max :

1.9W Ta

FET Type :

N-Channel

Factory Lead Time :

14 Weeks

Case Connection :

DRAIN

Terminal Form :

C BEND

Published :

2008

Height :

1.04mm

Input Capacitance (Ciss) (Max) @ Vds :

5700pF @ 6V

Pin Count :

8

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

20A

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Series :

TrenchFET®

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

12V

Fall Time (Typ) :

40 ns

Width :

5.89mm

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

60A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Rise Time :

40ns

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 29A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Turn-Off Delay Time :

140 ns

Package / Case :

PowerPAK® SO-8

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

8V

Number of Terminations :

5

Mounting Type :

Surface Mount