SI7856ADP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

5

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0037Ohm

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 25A, 10V

Current - Continuous Drain (Id) @ 25°C :

15A Ta

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

40

Rise Time :

15ns

JESD-30 Code :

R-XDSO-C5

Terminal Position :

Dual

Pbfree Code :

yes

Published :

2016

Pulsed Drain Current-Max (IDM) :

60A

Radiation Hardening :

No

Fall Time (Typ) :

30 ns

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 4.5V

Number of Elements :

1

Series :

TrenchFET®

Peak Reflow Temperature (Cel) :

260

Number of Pins :

8

Turn On Delay Time :

21 ns

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

C BEND

FET Type :

N-Channel

Continuous Drain Current (ID) :

15A

Element Configuration :

Single

JESD-609 Code :

e3

Power Dissipation-Max :

1.9W Ta

Turn-Off Delay Time :

100 ns

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Package / Case :

PowerPAK® SO-8

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

1.9W

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Pin Count :

8