SI7856ADP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-XDSO-C5

RoHS Status :

ROHS3 Compliant

Number of Terminations :

5

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 4.5V

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

30V

Number of Elements :

1

Mounting Type :

Surface Mount

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Number of Pins :

8

Package / Case :

PowerPAK® SO-8

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

25A

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

100 ns

Lead Free :

Lead Free

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Form :

C BEND

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Resistance :

3.7mOhm

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

40

Pulsed Drain Current-Max (IDM) :

60A

Fall Time (Typ) :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

TrenchFET®

Turn On Delay Time :

21 ns

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 25A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Published :

2013

Power Dissipation :

1.9W

Pin Count :

8

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Rise Time :

15ns

Pbfree Code :

yes

Transistor Application :

SWITCHING

Element Configuration :

Single

Power Dissipation-Max :

1.9W Ta