SI7852DP-T1-E3
- Mfr.Part #
- SI7852DP-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 7.6A PPAK SO-8
- Stock
- 36,029
- In Stock :
- 36,029
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Number of Pins :
- 8
- Current - Continuous Drain (Id) @ 25°C :
- 7.6A Ta
- Threshold Voltage :
- 2V
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Surface Mount
- Published :
- 2011
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Pin Count :
- 8
- Length :
- 4.9mm
- Turn On Delay Time :
- 17 ns
- Number of Channels :
- 1
- Turn-Off Delay Time :
- 40 ns
- Max Junction Temperature (Tj) :
- 150°C
- Drain to Source Breakdown Voltage :
- 80V
- Nominal Vgs :
- 2 V
- Terminal Position :
- Dual
- Power Dissipation :
- 1.9W
- Transistor Element Material :
- SILICON
- Package / Case :
- PowerPAK® SO-8
- Terminal Form :
- C BEND
- Rise Time :
- 11ns
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-XDSO-C5
- Number of Elements :
- 1
- Weight :
- 506.605978mg
- Continuous Drain Current (ID) :
- 12.5A
- Power Dissipation-Max :
- 1.9W Ta
- Factory Lead Time :
- 14 Weeks
- Drain Current-Max (Abs) (ID) :
- 7.6A
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- Fall Time (Typ) :
- 11 ns
- Contact Plating :
- Tin
- Pulsed Drain Current-Max (IDM) :
- 50A
- Vgs(th) (Max) @ Id :
- 2V @ 250μA (Min)
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Width :
- 5.89mm
- Series :
- TrenchFET®
- Resistance :
- 16.5mOhm
- Additional Feature :
- FAST SWITCHING
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 16.5m Ω @ 10A, 10V
- Number of Terminations :
- 5
- Height :
- 1.12mm
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Datasheets
- SI7852DP-T1-E3
N-Channel Tape & Reel (TR) 16.5m Ω @ 10A, 10V ±20V 41nC @ 10V PowerPAK® SO-8
SI7852DP-T1-E3 Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 80V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 80V.There is no drain current on this device since the maximum continuous current it can conduct is 7.6A.As a result of its turn-off delay time, which is 40 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 50A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 17 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2V.In addition to reducing power consumption, this device uses drive voltage (6V 10V).
SI7852DP-T1-E3 Features
a continuous drain current (ID) of 12.5A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 50A.
a threshold voltage of 2V
SI7852DP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7852DP-T1-E3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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