SI7852ADP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Drain to Source Breakdown Voltage :

80V

Fall Time (Typ) :

9 ns

Rise Time :

9ns

Series :

TrenchFET®

Transistor Element Material :

SILICON

Number of Terminations :

5

Resistance :

17mOhm

Weight :

506.605978mg

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

8

Height :

1.12mm

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

17m Ω @ 10A, 10V

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

60A

Turn-Off Delay Time :

26 ns

Vgs (Max) :

±20V

Terminal Position :

Dual

Case Connection :

DRAIN

Width :

5.89mm

Number of Channels :

1

Terminal Form :

C BEND

Published :

2012

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Continuous Drain Current (ID) :

30A

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Threshold Voltage :

4.5V

Number of Elements :

1

Power Dissipation :

5W

RoHS Status :

ROHS3 Compliant

Max Junction Temperature (Tj) :

150°C

ECCN Code :

EAR99

Manufacturer Package Identifier :

S17-0173_SINGLE

Pbfree Code :

yes

Turn On Delay Time :

16 ns

Avalanche Energy Rating (Eas) :

45 mJ

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Length :

4.9mm

Transistor Application :

SWITCHING

Factory Lead Time :

14 Weeks

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-XDSO-C5

Power Dissipation-Max :

5W Ta 62.5W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1825pF @ 40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

Unknown

Element Configuration :

Single

Pin Count :

8

Package / Case :

PowerPAK® SO-8

Packaging :

Tape and Reel (TR)